IEEE

Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range

Abstract: This letter presents the impact of 6.5-kV silicon carbide (SiC) planar mosfet negative gate bias to their reverse-recovery behavior at room temperature to 175 °C. The difference between low- ...
Fleet Owner

Mack’s new ‘badass’ highway truck shows off OEM’s pioneering, hard-working attitude

BROOKLYN, New York—For 125 years, Mack Trucks has been synonymous with American power and toughness. But the trucking pioneer wanted its next on-highway truck to meet its own B.A. test. “What is the ...
Compoundsemiconductor.net

Wolfspeed introduces first 10kV SiC Power MOSFET

Technology represents "a historic leap in power electronics" improving system size, weight, reliability, and cost of ownership Wolfspeed has announced the industry's first commercially available 10 kV ...
IEEE

A Self-Regulating Active Gate Driver for SiC MOSFET Switching Loss Optimization

Abstract: This paper presents a self-regulating active gate driver (AGD) for Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). The proposed AGD aims to reduce switching ...